Fig. 3From: A general neuro-space mapping technique for microwave device modelingComparison between the pHEMT device data, coarse model, and three Neuro-SM models. a dc. b-e S parameter at two test biase points (0.7V, 2.4V) and (0.3 V 5.2V). f HB at different input power levels -10-3dBmBack to article page