Open Access

Parametric Conversion Using Custom MOS Varactors

  • Howard Chan1,
  • Zhongbo Chen1,
  • Sebastian Magierowski1Email author and
  • Krzysztof (Kris) Iniewski2
EURASIP Journal on Wireless Communications and Networking20062006:012945

DOI: 10.1155/WCN/2006/12945

Received: 14 October 2005

Accepted: 18 April 2006

Published: 20 June 2006

Abstract

The possible role of customized MOS varactors in amplification, mixing, and frequency control of future millimeter wave CMOS RFICs is outlined. First, the parametric conversion concept is revisited and discussed in terms of modern RF communications systems. Second, the modeling, design, and optimization of MOS varactors are reconsidered in the context of their central role in parametric circuits. Third, a balanced varactor structure is proposed for robust oscillator frequency control in the presence of large extrinsic noise expected in tightly integrated wireless communicators. Main points include the proposal of a subharmonic pumping scheme based on the MOS varactor, a nonequilibrium elastance-voltage model, optimal varactor layout suggestions, custom m-CMOS varactor design and measurement, device-level balanced varactor simulations, and parametric circuit evaluation based on measured device characteristics.

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Authors’ Affiliations

(1)
Department of Electrical and Computer Engineering, University of Calgary
(2)
Department of Electrical and Computer Engineering, University of Alberta

References

  1. Faraday M: On a peculiar class of acoustical figures; and on certain forms assumed by groups of particles upon vibrating elastic surfaces. Philosophical Transactions of the Royal Society of London 1831, 121: 299–340. 10.1098/rstl.1831.0018View ArticleGoogle Scholar
  2. Suhl H: Proposal for a ferromagnetic amplifier in the microwave range. Physical Review 1957,106(2):384–385. 10.1103/PhysRev.106.384View ArticleGoogle Scholar
  3. Weiss MT: A solid-state microwave amplifier and oscillator using ferrites. Physical Review 1957,107(1):317.View ArticleGoogle Scholar
  4. Hartley RVL: A wave mechanism of quantum phenomena. Physical Review 1929, 33: 289.Google Scholar
  5. Hartley RVL: Oscillations in systems with non-linear reactance. Bell System Technical Journal 1936, 15: 424–440.View ArticleGoogle Scholar
  6. Barrow W: On the oscillations of a circuit having a periodically varying capacitance. Proceedings of the Institute of Radio Engineers 1934, 22: 201–212.Google Scholar
  7. Raskin J-P, Brown AR, Khuri-Yakub BT, Rebeiz GM: A novel parametric-effect MEMS amplifier. Journal of Microelectromechanical Systems 2000,9(4):528–537. 10.1109/84.896775View ArticleGoogle Scholar
  8. Olkhovets A, Carr DW, Parpia JM, Craighead HG: Non-degenerate nanomechanical parametric amplifier. Proceedings of 14th IEEE International Conference on Micro Electro Mechanical Systems (MEMS '01), January 2001, Interlaken, switzerland 298–300.Google Scholar
  9. Ranganathan S, Tsividis Y: Discrete-time parametric amplification based on a three-terminal MOS varactor: analysis and experimental results. IEEE Journal of Solid-State Circuits 2003,38(12):2087–2093. 10.1109/JSSC.2003.819162View ArticleGoogle Scholar
  10. Knappe S, Shah V, Schwindt PDD, et al.: A microfabricated atomic clock. Applied Physics Letters 2004,85(9):1460–1462. 10.1063/1.1787942View ArticleGoogle Scholar
  11. Manley JM, Rowe HE: Some general properties of nonlinear elements—Part I. General energy relations. Proceedings of the Institute of Radio Engineers 1956, 44: 904–913.Google Scholar
  12. Rowe HE: Some general properties of nonlinear elements. II. Small signal theory. Proceedings of the Institute of Radio Engineers 1958, 46: 850–860.Google Scholar
  13. Kleveland B, Diaz CH, Vock D, Madden L, Lee TH, Wong SS: Monolithic CMOS distributed amplifier and oscillator. Proceedings of IEEE International Solid-State Circuits Conference, Digest of Technical Papers (ISSCC '99), February 1999, San Francisco, Calif, USA 70–71.Google Scholar
  14. Hackl B, Bock J: 42 GHz active frequency doubler in SiGe bipolar technology. Proceedings of International Conference on Microwave and Millimeter Wave Technology (ICMMT '02), August 2002, Beijing, China 54–57.Google Scholar
  15. Lee C, Yao T, Mangan A, Yau K, Copeland MA, Voinigescu SP: SiGe BiCMOS 65-GHz BPSK transmitter and 30 to 122 GHz LC-varactor VCOs with up to 21tuning range. Proceedings of IEEE Compound Semiconductor Integrated Circuit Symposium (CSIC '04), October 2004, Monterey, Calif, USA 179–182.Google Scholar
  16. Chan H: Sub-harmonic pumping in parametric amplifiers. M.Sc. dissertation, University of Calgary, Calgary, Alberta, Canada, (in preparation)Google Scholar
  17. Soorapanth T, Yue CP, Shaeffer DK, Lee TI, Wong SS: Analysis and optimization of accumulation-mode varactor for RF ICs. Proceedings of IEEE Symposium on VLSI Circuits, Digest of Technical Papers, June 1998, Honolulu, Hawaii, USA 32–33.Google Scholar
  18. Castello R, Erratico P, Manzini S, Svelto F: A ±30% tuning range varactor compatible with future scaled technologies. Proceedings of IEEE Symposium on VLSI Circuits, Digest of Technical Papers, June 1998, Honolulu, Hawaii, USA 34–35.Google Scholar
  19. Penfield P, Rafuse RP: Varactor Applications. MIT Press, Cambridge, Mass, USA; 1962.Google Scholar
  20. Maget J, Kraus R, Tiebout M: A physical model of a CMOS varactor with high capacitance tuning range and its application to simulate a voltage controlled oscillator. International Semiconductor Device Research Symposium (ISDRS '01), December 2001, Washington, DC 609–612.Google Scholar
  21. Victory J, Yan Z, Gildenblat G, McAndrew C, Zheng J: A physically based, scalable MOS varactor model and extraction methodology for RF applications. IEEE Transactions on Electron Devices 2005,52(7):1343–1353. 10.1109/TED.2005.850693View ArticleGoogle Scholar
  22. Tsividis YP: Operation and Modeling of the MOS Transistor. McGraw-Hill, New York, NY, USA; 1987.Google Scholar
  23. Nicollian EH, Brews JR: MOS (Metal Oxide Semiconductor) Physics and Technology. Wiley-Interscience, New York, NY, USA; 1982.Google Scholar
  24. Porret A-S, Melly T, Enz CC, Vittoz EA: Design of high-Q varactors for low-power wireless applications using a standard CMOS process. IEEE Journal of Solid-State Circuits 2000,35(3):337–345. 10.1109/4.826815View ArticleGoogle Scholar
  25. Magierowski S, Iniewski K, Zukotynski S: Differentially tunable varactor with built-in common-mode rejection. Proceedings of 45th Midwest Symposium on Circuits and Systems, August 2002, Tulsa, Okla, USA 1: 559–562.Google Scholar
  26. Meyer RG, Stephens ML: Distortion in variable-capacitance diodes. IEEE Journal of Solid-State Circuits 1975,10(1):47–54. 10.1109/JSSC.1975.1050553View ArticleGoogle Scholar
  27. Floyd BA, Reynolds SK, Pfeiffer UR, Zwick T, Beukema T, Gaucher B: SiGe bipolar transceiver circuits operating at 60 GHz. IEEE Journal of Solid-State Circuits 2005,40(1):156–167.View ArticleGoogle Scholar

Copyright

© Howard Chan et al. 2006

This article is published under license to BioMed Central Ltd. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.