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Using MEMS Capacitive Switches in Tunable RF Amplifiers

Abstract

A MEMS capacitive switch suitable for use in tunable RF amplifiers is described. A MEMS switch is designed, fabricated, and characterized with physical and RF measurements for inclusion in simulations. Using the MEMS switch models, a dual-band low-noise amplifier (LNA) operating at GHz and GHz, and a tunable power amplifier (PA) at GHz are simulated inm CMOS. MEMS switches allow the LNA to operate with 11 dB of isolation between the two bands while maintaining dB of gain and sub- dB noise figure. MEMS switches are used to implement a variable matching network that allows the PA to realize up to 37% PAE improvement at low input powers.

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Correspondence to John Danson.

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Danson, J., Plett, C. & Tait, N. Using MEMS Capacitive Switches in Tunable RF Amplifiers. J Wireless Com Network 2006, 016518 (2006). https://doi.org/10.1155/WCN/2006/16518

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Keywords

  • Information System
  • Input Power
  • System Application
  • Power Amplifier
  • Noise Figure