Open Access

CMOS Silicon-on-Sapphire RF Tunable Matching Networks

EURASIP Journal on Wireless Communications and Networking20062006:086531

https://doi.org/10.1155/WCN/2006/86531

Received: 28 October 2005

Accepted: 9 January 2006

Published: 15 March 2006

Abstract

This paper describes the design and optimization of an RF tunable network capable of matching highly mismatched loads to 50 at 1.9 GHz. Tuning was achieved using switched capacitors with low-loss, single-transistor switches. Simulations show that the performance of the matching network depends strongly on the switch performances and on the inductor losses. A 0.5 m silicon-on-sapphire (SOS) CMOS technology was chosen for network implementation because of the relatively high-quality monolithic inductors achievable in the process. The matching network provides very good matching for inductive loads, and acceptable matching for highly capacitive loads. A 1 dB compression point greater than dBm was obtained for a wide range of load impedances.

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Authors’ Affiliations

(1)
Department of Electrical and Computer Engineering, University of Calgary
(2)
TRLabs, Department of Electrical and Computer Engineering, University of Calgary

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Copyright

© Chamseddine et al. 2006

This article is published under license to BioMed Central Ltd. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.